to-126 plastic-encapsulated trans istors BD433/435/437 transistor (npn) features power dissipation p cm: 1.25 w (tamb=25 ) collector current i cm: 4 a collector-base voltage v (br)cbo : BD433 22 v bd435 32 v bd437 45 v operating and storage junction temperature range t j , t stg : -55 to +150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo BD433 ic= 100 a, i e =0 bd435 bd437 22 32 45 v collector-emitter breakdown voltage v (br)ceo BD433 ic= 100 ma, i b =0 bd435 bd437 22 32 45 v emitter-base breakdown voltage v (br)ebo i e = 100 a, i c =0 5 v collector cut-off current i cbo v cb = 22 v, i e =0 BD433 v cb =32v, i e =0 bd435 v cb = 45 v, i e =0 bd437 1 a collector cut-off current i ceo v ce = 22 v, i e =0 BD433 v ce =32v, i e =0 bd435 v ce = 45 v, i e =0 bd437 10 a emitter cut-off current i ebo v eb = 5 v, i e =0 1 a h fe(1) v ce = 1 v, i c = 500 ma 85 h fe(2) v ce = 5 v, i c = 10 ma BD433/bd435 bd437 40 30 dc current gain h fe(3) v ce = 1 v, i c = 2 a BD433/bd435 bd437 50 40 collector-emitter saturation voltage v ce(sat) i c = 2 a, i b =0.2a BD433/bd435 bd437 0.5 0.6 v base-emitter voltage v be v ce = 1 v, i c = 2 a BD433/bd435 bd437 1.1 1.2 v transition frequency f t v ce = 1 v, i c = 250 ma 3 mhz 1 2 3 to-126 1. emitter 2. collector 3. base transys electronics li m ite d
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